The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

May. 23, 2019
Applicant:

Jiangsu Leuven Instruments Co. Ltd, Jiangsu, CN;

Inventors:

Ziming Liu, Jiangsu, CN;

Juebin Wang, Jiangsu, CN;

Zhongyuan Jiang, Jiangsu, CN;

Dongchen Che, Jiangsu, CN;

Hushan Cui, Jiangsu, CN;

Dongdong Hu, Jiangsu, CN;

Lu Chen, Jiangsu, CN;

Hongyue Sun, Jiangsu, CN;

Dajian Han, Jiangsu, CN;

Kaidong Xu, Jiangsu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10N 50/10 (2023.02);
Abstract

Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.


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