Nijmegen, Netherlands

Hungjin Kim

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Nexperia B.v.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hungjin Kim. Retrieved from https://idiyas.com/inventor/hungjin-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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3 patents (USPTO):Explore Patents

Title: The Innovations of Hungjin Kim

Introduction

Hungjin Kim is a notable inventor based in Nijmegen, Netherlands. He has made significant contributions to the field of semiconductor technology. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Hungjin Kim holds a patent for a semiconductor device and method of manufacture. This innovative device includes a substrate with a first epitaxial layer, a voltage blocking element within that layer, a second epitaxial layer on top, and a vertical switching element in the second layer. This design aims to improve the functionality and reliability of semiconductor devices.

Career Highlights

Hungjin Kim is currently employed at Nexperia B.V., a company known for its expertise in semiconductor solutions. His role involves researching and developing cutting-edge technologies that push the boundaries of what is possible in the semiconductor industry.

Collaborations

Hungjin collaborates with Phil Rutter, a fellow innovator in the field. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Hungjin Kim's work in semiconductor innovation exemplifies the impact of dedicated inventors in technology. His contributions continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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