The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Mar. 08, 2022
Nexperia B.v., Nijmegen, NL;
Hungjin Kim, Nijmegen, NL;
Phil Rutter, Nijmegen, NL;
Nexperia B.V., Nijmegen, NL;
Abstract
A semiconductor device and method of manufacturing thereof is provided, including one or more mutually separated trench structures and semiconductor devices in which a first polysilicon body and a second polysilicon body are provided in the trenches, and the first and second polysilicon bodies can be individually biased. The method according to the present disclosure includes the step of performing a wet oxidation for oxidizing the first polysilicon body and the exposed upper surface of the sidewall for forming, within the active area, a first part of a second dielectric layer and subsequently performing a dry oxidation for forming a remaining part of the second dielectric layer. A second polysilicon body is arranged next within the active area on the second dielectric layer in the trench so that the second polysilicon body is separated from the sidewall of the trench and from the first polysilicon body by the second dielectric layer.