Hung-Wen Huang

Title: Innovations of Hung-Wen Huang

Introduction

Hung-Wen Huang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of fin structures. With a total of 2 patents, his work has advanced the understanding and application of FinFET structures in modern electronics.

Latest Patents

Hung-Wen Huang's latest patents include a method for fabricating a fin structure with tensile stress. This innovative method involves providing a structure divided into an N-type transistor region and a P-type transistor region. The process begins with the formation of two first trenches and two second trenches in the substrate, where the first trenches define the fin structure and the second trenches segment the first trenches and the fin. Following this, a flowable chemical vapor deposition is performed to create a silicon oxide layer that fills the trenches. A patterned mask is then formed within the N-type transistor region, covering only the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to ensure that the exposed silicon oxide layer is lower than the top surface of the fin structure, using the patterned mask as a guide. Finally, the patterned mask is removed, completing the fabrication process.

Career Highlights

Hung-Wen Huang is currently employed at United Microelectronics Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices.

Collaborations

He has collaborated with notable colleagues such as Wei-Jen Chen and Ting-Hsuan Kang, contributing to various projects that push the boundaries of semiconductor research.

Conclusion

Hung-Wen Huang's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods for fabricating fin structures are paving the way for advancements in electronic devices.