Hsinchu, Taiwan

Hung-Lung Lin

This inventor holds 3 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Lung Lin. Retrieved from https://idiyas.com/inventor/hung-lung-lin-5mq06zbh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 48(Granted Patents)


Company Filing History:


Years Active: 2014-2016

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3 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hung-Lung Lin

Introduction

Hung-Lung Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of integrated circuit design, particularly in the FinFET process. With a total of 3 patents to his name, Lin continues to push the boundaries of technology.

Latest Patents

One of Lin's latest patents is titled "Stretch dummy cell insertion in FinFET process." This method involves identifying an empty region in an integrated circuit (IC) layout, which does not contain any active fins. The process includes providing a standard dummy fin cell and forming an expanded dummy fin cell. The standard dummy fin cell consists of multiple partitions, while the expanded dummy fin cell is larger and includes integer multiples of each partition. The empty region is then filled with a plurality of dummy fin cells, including the expanded dummy fin cell, which is implemented in the IC.

Career Highlights

Hung-Lung Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the efficiency and performance of integrated circuits.

Collaborations

Lin has collaborated with several talented individuals in his field, including Li-Sheng Ke and Wen-Ju Preet Yang. These collaborations have fostered innovation and contributed to the success of their projects.

Conclusion

Hung-Lung Lin is a prominent inventor whose work in the FinFET process has led to significant advancements in integrated circuit design. His contributions continue to shape the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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