Miaoli County, Taiwan

Hung-I Hsu


Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2008-2010

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3 patents (USPTO):Explore Patents

Title: The Innovations of Hung-I Hsu

Introduction

Hung-I Hsu is a notable inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of thin film transistors, holding a total of 3 patents. His work has advanced the technology used in electronic devices, showcasing his expertise and innovative spirit.

Latest Patents

Among his latest patents is a method of forming a thin film transistor. This invention includes a gate, a gate insulating layer, a semiconductor layer, and a source/drain. The gate is positioned over a substrate and comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate, while the semiconductor layer is placed above the gate insulating layer. The source/drain is then positioned over the semiconductor layer. Another significant patent is for a thin film transistor with electrodes resistant to oxidation and erosion. This design features a gate that includes at least one layer of aluminum-yttrium alloy nitride. Similar to the previous invention, the gate insulating layer covers the gate, and the source and drain electrodes are placed over the semiconductor layer.

Career Highlights

Hung-I Hsu is currently employed at Chunghwa Picture Tubes, Ltd. His role at the company allows him to apply his innovative ideas and contribute to the development of advanced technologies in the display industry. His work has been instrumental in enhancing the performance and reliability of thin film transistors.

Collaborations

Hung-I Hsu has collaborated with notable colleagues such as Wen-Kuang Tsao and Hsiang-Hsien Chung. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Hung-I Hsu's contributions to the field of thin film transistors highlight his innovative capabilities and dedication to advancing technology. His patents reflect a commitment to improving electronic devices, making him a significant figure in the industry.

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