The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Jul. 05, 2005
Applicants:
Wen-kuang Tsao, Taoyuan County, TW;
Hung-i Hsu, Miaoli County, TW;
Inventors:
Wen-Kuang Tsao, Taoyuan County, TW;
Hung-I Hsu, Miaoli County, TW;
Assignee:
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/20 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.