The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Apr. 22, 2005
Wen-kuang Tsao, Taoyuan County, TW;
Hung-i Hsu, Miaoli County, TW;
Hsiang-hsien Chung, Taoyuan County, TW;
Min-huang Chen, Taipei, TW;
Wen-Kuang Tsao, Taoyuan County, TW;
Hung-I Hsu, Miaoli County, TW;
Hsiang-Hsien Chung, Taoyuan County, TW;
Min-Huang Chen, Taipei, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Abstract
A thin film transistor including a gate, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source electrode and the drain electrode are disposed over the semiconductor layer.