Hsinchu, Taiwan

Huizhi Yang

This inventor holds 1 USPTO granted patent. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC China Company Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huizhi Yang. Retrieved from https://idiyas.com/inventor/huizhi-yang-uw6fq296

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Huizhi Yang: Innovator in Integrated Circuit Technology

Introduction

Huizhi Yang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of integrated circuits, particularly in the area of electrostatic discharge (ESD) protection.

Latest Patents

Yang holds a patent for an "Integrated Circuit with ESD Protection Circuit." This innovation addresses critical challenges in protecting integrated circuits from damage caused by electrostatic discharge, enhancing the reliability and longevity of electronic devices.

Career Highlights

Throughout his career, Huizhi Yang has worked with prominent companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and TSMC China Company Limited. His experience in these leading firms has allowed him to develop and refine his expertise in integrated circuit design and protection.

Collaborations

Yang has collaborated with talented professionals in his field, including coworkers Qinling Ma and Lei Pan. Their collective efforts have contributed to advancements in semiconductor technology and innovation.

Conclusion

Huizhi Yang's work in integrated circuit technology, particularly his patent for ESD protection, showcases his commitment to innovation in the semiconductor industry. His collaborations and career experiences further highlight his impact on the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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