Hsinchu, Taiwan

Hui-Ling Wang

This inventor holds 7 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hui-Ling Wang. Retrieved from https://idiyas.com/inventor/hui-ling-wang-yd890olf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 156(Granted Patents)


Location History:

  • Taipei, TW (1999 - 2001)
  • Hsin-Chu, TW (2000 - 2003)

Company Filing History:


Years Active: 1999-2003

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7 patents (USPTO):Explore Patents

Title: Innovations of Hui-Ling Wang in Semiconductor Technology

Introduction

Hui-Ling Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on improving the reliability and performance of multilayer structures in integrated circuits.

Latest Patents

One of his latest patents is a method and structure to enhance the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits. This innovative composite dielectric structure prevents delamination of FSG and allows it to be effectively used as the interlevel dielectric between successive conducting interconnection patterns in multilevel integrated circuit structures. The structure includes FSG, optional undoped silicon oxide, silicon-rich silicon oxide, and silicon nitride. The silicon-rich silicon oxide layer, with a thickness between about 1000 and 2000 Angstroms, prevents the reaction of F atoms from the FSG layer with the silicon nitride layer during manufacturing heat treatment cycles. This innovation effectively prevents the formation of delamination bubbles that can cause peeling of the FSG layer.

Another notable patent addresses the delamination of a silicon nitride layer from an underlying spin-on glass layer. This method improves the adhesion of a thick silicon nitride layer to the underlying spin-on glass layer. The process involves applying, baking, and curing a spin-on glass layer, followed by plasma treatment using a nitrous oxide plasma. This treatment enhances the adhesion of the thick silicon nitride layer and reduces the risk of delamination.

Career Highlights

Hui-Ling Wang is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to innovate and contribute to advancements in semiconductor technology. His expertise and dedication have made him a valuable asset in the industry.

Collaborations

Throughout his career, Hui-Ling Wang has collaborated with notable colleagues, including Ying-Lang Wang and Szu-An Wu. These collaborations have further enriched his research and development efforts.

Conclusion

Hui-Ling Wang's contributions to semiconductor technology through his innovative patents demonstrate his commitment to enhancing the reliability and performance of integrated circuits. His work continues to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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