Hui-Ju Yoo

Title: Hui-Ju Yoo and Silicon Monitoring for Semiconductor Manufacturing.

Introduction

Hui-Ju Yoo is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Company Limited. Her patent work addresses monitoring chemical conditions during semiconductor fabrication. She is credited with 1 patent.

Latest Patents

Yoo’s listed patent, “Silicon Monitor for Detection of H2O2 in Acid Bath,” describes a method for detecting oxidizing contamination in acid etching baths used to remove silicon oxide layers from silicon substrates. The method uses a silicon substrate with an ion-implanted doped region. When the substrate is immersed in a buffered oxide etch bath, an oxidizing contaminant can be detected through an increase in the doped region’s resistance after the surface oxide is removed.

Career Highlights

Yoo’s invention focuses on a practical monitoring technique for semiconductor processing. By using changes in electrical resistance as an indicator of contamination, the method offers a way to assess acid-bath conditions during silicon integrated-circuit manufacturing.

Collaborations

Yoo’s listed coworkers include Cheng-Kun Lin and Szu-An Wu. Her work is associated with Taiwan Semiconductor Manufacturing Company Limited.

Conclusion

Hui-Ju Yoo’s patent describes a silicon-based approach to detecting oxidizing contamination in semiconductor etching baths, connecting electrical measurement with process monitoring in microelectronics fabrication.