The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Sep. 15, 1999
Hui-Ju Yoo, Hsin-Chu, TW;
Szu-An Wu, Hsin-Chu, TW;
Cheng-Kun Lin, Taipei, TW;
Shiow-Jye Jenq, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method and means for detection of oxidizing contamination in acid etching baths employed to etch silicon oxide layers from silicon substrates employed in silicon integrated circuit microelectronics fabrications. There is provided a silicon substrate having within a doped region formed employing ion implantation. The silicon substrate is immersed within a buffered oxide etch (BOE) acid bath, wherein the presence of an oxidizing contaminant correlates with an increase in the resistance of the doped region upon the removal of any silicon oxide layer on the silicon surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile