Hui-Hung Kuo

Title: Innovations of Hui-Hung Kuo in Non-Volatile Memory Technology

Introduction

Hui-Hung Kuo is a notable inventor based in Kaohsiung County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in non-volatile memory structures. His innovative approach has led to the development of a unique method for fabricating non-volatile memory.

Latest Patents

Hui-Hung Kuo holds a patent for a "Non-volatile memory structure and method of fabricating non-volatile memory." This patent describes a method that involves providing a substrate with a tunneling layer and a floating gate layer. A mask layer is formed on the floating gate, which has openings that expose portions of the floating gate layer. The method includes removing portions of the floating gate layer from the openings to create sunken regions. An inter-gate dielectric layer is then formed on the floating gate layer, followed by the formation of a control gate layer. Finally, the mask layer and the underlying floating gate layer are removed to create another opening, where a select gate layer is formed.

Career Highlights

Hui-Hung Kuo is currently associated with Powerchip Semiconductor Corporation, where he continues to advance his research and development efforts in semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of non-volatile memory devices.

Collaborations

Hui-Hung Kuo has collaborated with notable colleagues such as Tsung-Lung Chen and Cheng-Yuan Hsu. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Hui-Hung Kuo's contributions to non-volatile memory technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing work at Powerchip Semiconductor Corporation highlight the importance of advancements in memory technology.