Hui-chul Shin

Title: Hui-chul Shin and His Integrated Circuit Innovation.

Introduction

Hui-chul Shin is an inventor associated with Uijeongbu, South Korea, and Samsung Electronics Co., Ltd. His patent work includes an integrated circuit device designed with a layered structure and distinct gate portions.

Latest Patents

The provided information lists one patent for Shin: “Integrated circuit device.” The invention includes a bulk substrate with a first-conductivity-type well and a second-conductivity-type drift region. A stack pattern sits on the substrate, comprising a buried insulation pattern over the drift region and a semiconductor body pattern above the insulation. A gate insulation layer covers the well’s upper surface and the stack pattern’s sidewall and upper surface. The gate electrode has one portion opposite the well and another opposite the drift region, with the stack pattern positioned between the latter portion and the drift region. This arrangement describes a specialized structure for an integrated circuit device.

Career Highlights

Shin is associated with Samsung Electronics Co., Ltd., a company active in electronics and semiconductor technologies. The available information identifies 1 patent attributed to him.

Collaborations

The provided information names Kwan-young Kim and Aliaksei Ivaniukovich as Shin’s coworkers. It does not specify their roles in the patent or describe particular collaborative projects.

Conclusion

Hui-chul Shin’s listed patent presents a layered integrated circuit structure with distinct gate portions, reflecting his documented connection to semiconductor innovation at Samsung Electronics Co., Ltd.