Samsung Electronics Co., Ltd.

Hui-chul Shin

Kwan-young Kim

Aliaksei Ivaniukovich

Mi-jin Han

An integrated circuit device includes a bulk substrate including a first conductivity type well and a second conductivity type drift region, a stack pattern disposed on the bulk substrate and including a buried insulation pattern on the second conductivity type drift region and a semiconductor body pattern on the buried insulation pattern, a gate insulation layer on an upper surface of the first conductivity type well and on a sidewall and an upper surface of the stack pattern, and a gate electrode on the gate insulation layer. The gate electrode includes a first gate portion opposite to the first conductivity type well with the gate insulation layer therebetween and a second gate portion opposite to the second conductivity type drift region with the gate insulation layer and the stack pattern therebetween.

Growing community of inventors

Uijeongbu-si, South Korea

Hui-chul Shin