Hugh Barnaby

Title: Hugh Barnaby: Innovator in Semiconductor Technology

Introduction

Hugh Barnaby is a notable inventor based in Tempe, AZ (US), recognized for his contributions to semiconductor technology. With a total of 4 patents, he has made significant advancements in the field, particularly in the development of steep slope transistors and methods for modeling excess current in bipolar junction transistors.

Latest Patents

One of his latest patents is for steep slope transistors with threshold switching devices. This invention includes a steep-slope field effect transistor (FET) that features a source region and a drain region, along with a threshold switching device in direct contact with either region. The fabrication process involves creating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) and layering various components to enhance performance.

Another significant patent focuses on a method for modeling excess current in irradiated bipolar junction transistors (BJTs). This method quantifies defect-related electrostatic effects to improve the accuracy of predicting excess base current in BJTs. The approach can be adapted for various BJT configurations and is particularly useful for qualifying components for use in space systems.

Career Highlights

Hugh Barnaby has worked at prestigious institutions such as Arizona State University and the University of Southern California. His work has contributed to the advancement of semiconductor technologies and their applications in various fields.

Collaborations

Throughout his career, Barnaby has collaborated with notable colleagues, including Ivan Sanchez Esqueda and Hongyu Yu. These partnerships have fostered innovation and development in his research endeavors.

Conclusion

Hugh Barnaby's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry and pave the way for future innovations.