The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jan. 10, 2020
Xuanqi Huang, Tempe, AZ (US);
Yuji Zhao, Chandler, AZ (US);
Runchen Fang, Milpitas, CA (US);
Hugh Barnaby, Tempe, AZ (US);
Xuanqi Huang, Tempe, AZ (US);
Yuji Zhao, Chandler, AZ (US);
Runchen Fang, Milpitas, CA (US);
Hugh Barnaby, Tempe, AZ (US);
Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US);
Abstract
A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.