Hsinchu, Taiwan

Huei-Huang Chen

This inventor holds 2 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2004-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huei-Huang Chen. Retrieved from https://idiyas.com/inventor/huei-huang-chen-wid5q2ll

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Changhua, TW (2004)
  • Hsinchu, TW (2009)

Company Filing History:


Years Active: 2004-2009

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Huei-Huang Chen

Introduction

Huei-Huang Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of flash memory technology. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is related to a flash memory with a trench common source line. This invention includes a substrate, control gates, trenches, source regions, isolation structures, drain regions, a common source line, floating gates, tunneling dielectric layers, and a dielectric layer. The design features control gates and trenches oriented in different directions on the substrate. The source regions are strategically placed in the substrate and trenches adjacent to the control gates. Isolation structures fill the trenches between the source regions, while drain regions are located on the opposite side of the control gates. The common source line is integrated within the substrate and connects electrically to the source regions. Additionally, floating gates are positioned between the control gates and the substrate, with tunneling dielectric layers situated between the floating gates and the substrate, and a dielectric layer between the floating and control gates.

Another significant patent by Chen is a planarization method using anisotropic wet etching. This method is designed to planarize an insulating layer with an uneven surface on a substrate. The etching solution is created by mixing H SO, H PO, HF, and H O. The substrate is immersed in this solution, allowing it to flow over the insulating layer at a controlled rate to achieve the desired etching effect. After a specified etching duration, the insulating layer attains a more planar surface.

Career Highlights

Huei-Huang Chen is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of flash memory systems.

Collaborations

Some of his notable coworkers include Chun-Pei Wu and Wen-Bin Tsai, who contribute to the collaborative efforts in their projects.

Conclusion

Huei-Huang Chen's contributions to flash memory technology and his innovative patents highlight his role as a significant inventor in the field. His work continues to influence advancements in memory systems, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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