The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Feb. 07, 2002
Applicant:
Inventors:
Wen-Bin Tsai, Tainan, TW;
Ching-Yu Chang, Ilan Hsien, TW;
Chun-Pei Wu, Nantou Hsien, TW;
Huei-Huang Chen, Changhua, TW;
Samuel C. Pan, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 ; H01L 2/100 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
B44C 1/22 ; H01L 2/100 ; H01L 2/1302 ;
Abstract
A planarization method using anisotropic etching can be applied to planarize an insulating layer with an uneven surface on a substrate. H SO , H PO , HF and H O are mixed to form an etching solution. The substrate is placed into the etching solution to make the etching solution pass the surface of the insulating layer at a flow rate to etch the insulating layer. After a period of etching time, the insulating layer with a more planar surface can be obtained.