Huangsheng Ding

This inventor holds 6 USPTO granted patents. Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc.. Active years: 2015-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huangsheng Ding. Retrieved from https://idiyas.com/inventor/huangsheng-ding

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6

% Patents Active = 33.3

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 23(Granted Patents)

Company Filing History:

3 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2015-2018

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6 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9965420 - Slave device alert signal in inter-integrated circuit (I2C) bus system (2018-05-08),

2. 9964596 - Integrated circuit with low power scan system (2018-05-08),

3. 9939840 - Enhanced status monitor for scan testing (2018-04-10),

4. 9551749 - Test circuit for very low voltage and bias scan testing of integrated circuit (2017-01-24),

5. 9297855 - Integrated circuit with increased fault coverage (2016-03-29),

6. 9110133 - Reconfigurable circuit and decoder therefor (2015-08-18),

Title: Huangsheng Ding - Innovative Inventor from Suzhou

Introduction: Huangsheng Ding is a renowned inventor hailing from Suzhou, China, known for his groundbreaking contributions to various technological fields.

Latest Patents: Huangsheng Ding holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Ding has worked with leading research institutions and tech companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Huangsheng Ding has collaborated with top universities and multinational corporations, fostering a culture of innovation and knowledge sharing.

Conclusion: Huangsheng Ding's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]