Company Filing History:
Years Active: 2016-2017
Title: Hsuen-Wei Chen: Innovator in Non-Volatile Memory Technology
Introduction
Hsuen-Wei Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology, holding a total of 2 patents. His work focuses on innovative memory cell designs that enhance the performance and scalability of memory devices.
Latest Patents
Hsuen-Wei Chen's latest patents include a highly scalable single-poly non-volatile memory cell. This invention features a semiconductor substrate with a first and second OD region, an isolation region, and a PMOS select transistor. The design incorporates a PMOS floating gate transistor that is serially connected to the select transistor, enhancing the memory cell's functionality. Another notable patent is a non-volatile memory structure that includes a P substrate, an N well, and a PMOS storage transistor. This structure is designed to improve the efficiency and reliability of memory storage.
Career Highlights
Hsuen-Wei Chen is currently employed at Ememory Technology Inc., where he continues to push the boundaries of memory technology. His innovative designs have positioned him as a key player in the industry, contributing to advancements that benefit various applications in electronics.
Collaborations
Hsuen-Wei Chen has collaborated with notable colleagues such as Te-Hsun Hsu and Chun-Hsiao Li. These partnerships have fostered a creative environment that encourages the development of cutting-edge memory solutions.
Conclusion
Hsuen-Wei Chen's contributions to non-volatile memory technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of semiconductor design and memory architecture, making him a valuable asset to the field.