The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Sep. 04, 2014
Ememory Technology Inc., Hsin-Chu, TW;
Te-Hsun Hsu, Hsinchu County, TW;
Wei-Ren Chen, Pingtung County, TW;
Hsuen-Wei Chen, Hsinchu, TW;
Mu-Ying Tsao, Changhua County, TW;
Ying-Je Chen, Taichung, TW;
eMemory Technology Inc., Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A nonvolatile memory structure included a P substrate, an N well in the P substrate, and a PMOS storage transistor. The PMOS storage transistor includes a floating gate and an auxiliary gate disposed in close proximity to the floating gate. The floating gate and the auxiliary gate are disposed directly on the same floating gate channel of the PMOS storage transistor. A gap is provided between the auxiliary gate and the floating gate such that the auxiliary gate and the floating gate are separated from each other at least directly above the floating gate channel.