Hsinchu, Taiwan

Hsueh-Shih Fan


Average Co-Inventor Count = 4.6

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2015-2017

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5 patents (USPTO):Explore Patents

Title: Hsueh-Shih Fan: Innovator in Semiconductor Technology

Introduction

Hsueh-Shih Fan is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative devices that enhance the efficiency and functionality of semiconductor components.

Latest Patents

Among his latest patents is the Fin-type resistor, which presents a semiconductor device and a method for fabricating such a device. This device features a fin extending away from a substrate, with a plurality of epitaxially grown regions arranged along the top surface of the fin. The arrangement of these regions creates a resistance between two contacts that is influenced by their configuration. Another notable patent is the High efficiency FinFET diode, which addresses the degradation issues associated with conventional FinFET diodes. This invention includes a doped substrate, spaced-apart groups of semiconductor fin structures, and dielectric layers for insulation. The design incorporates multiple gate structures and semiconductor strips with opposite conductivity types, enhancing the diode's performance.

Career Highlights

Hsueh-Shih Fan is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technology.

Collaborations

He has collaborated with notable coworkers, including Chia-Hsin Hu and Sun-Jay Chang, contributing to various projects that push the boundaries of semiconductor applications.

Conclusion

Hsueh-Shih Fan's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor devices.

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