Hsiu Ouyang

Title: Hsiu Ouyang: Innovator in Semiconductor Technology

Introduction

Hsiu Ouyang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced etching methods for wordline electrodes in flash memory structures. With a total of 2 patents, Ouyang's work is instrumental in enhancing the efficiency and performance of semiconductor devices.

Latest Patents

Ouyang's latest patents include an innovative etching method for forming a square-cornered polysilicon wordline electrode. This patent describes a split gate FET wordline electrode structure and a method for forming it, which involves an improved polysilicon etching process. The process includes several steps, such as forming a first oxide layer on exposed polysilicon portions and conducting a multi-step reactive ion etching (RIE) process. Another significant patent focuses on methods of fabricating a word-line spacer for wide over-etching windows and strong fences. This method outlines the steps for creating word-line spacers that enhance the performance of split-gate flash memory structures.

Career Highlights

Hsiu Ouyang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to collaborate with other talented professionals in the field, contributing to groundbreaking advancements in semiconductor technology.

Collaborations

Ouyang has worked alongside notable colleagues, including Chi-Hsin Lo and Chia-Shiung Tsai. Their collaborative efforts have further propelled innovations in semiconductor manufacturing processes.

Conclusion

Hsiu Ouyang's contributions to semiconductor technology through his patents and collaborative work highlight his role as a key innovator in the industry. His advancements continue to influence the development of efficient and high-performance semiconductor devices.