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For the Inventor, By the Inventor

Austin, TX, United States of America

Hsin-Yu Chen

USPTO Granted Patents = 14

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:

goldMedal14 out of 3,529 
 
Arm Limited
 patents

Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

14 patents (USPTO):
1. 12412623 - Precharge circuitry for use with bitlines (2025-09-09),
2. 12087353 - Burst read with flexible burst length for on-chip memory (2024-09-10),
3. 12068025 - Power-up header circuitry for multi-bank memory (2024-08-20),
4. 11935580 - System cache peak power management (2024-03-19),
5. 11017142 - Methods and apparatuses of configurable integrated circuits (2021-05-25),
6. 11005461 - Level shift latch circuitry (2021-05-11),
7. 10535386 - Level shifter with bypass (2020-01-14),
8. 10177760 - Circuit with impedance elements connected to sources and drains of pMOSFET headers (2019-01-08),
9. 9627022 - Double pumped memory techniques (2017-04-18),
10. 9147451 - Memory device and method of controlling leakage current within such a memory device (2015-09-29),
11. 8830783 - Improving read stability of a semiconductor memory (2014-09-09),
12. 8611172 - Controlling a voltage level of an access signal to reduce access disturbs in semiconductor memories (2013-12-17),
13. 8493810 - Memory circuitry with write boost and write assist (2013-07-23),
14. 8315123 - Wordline voltage control within a memory (2012-11-20),

Title: Hsin-Yu Chen: Innovator in Memory Circuitry

Introduction

Hsin-Yu Chen is a prominent inventor based in Austin, TX (US). She has made significant contributions to the field of memory circuitry, holding a total of 14 patents. Her innovative work has advanced the efficiency and functionality of memory devices.

Latest Patents

Among her latest patents is a design for precharge circuitry for use with bitlines. This invention focuses on various implementations directed to a device with memory circuitry that includes bitlines coupled to an array of bitcells. The precharge circuitry is designed to precharge the bitlines during different modes of operation, including standby and active modes. Notably, it features a low power mode that prevents precharging during standby. Another significant patent involves a burst read with flexible burst length for on-chip memory. This technology allows for successive burst reads with reduced signal toggling and fewer bitline swings, enhancing the performance of system cache memory and hierarchical cache memory.

Career Highlights

Hsin-Yu Chen is currently employed at Arm Limited, a leading company in semiconductor and software design. Her work at Arm has positioned her as a key player in the development of advanced memory technologies.

Collaborations

She collaborates with talented individuals such as Yew Keong Chong and Andy Wangkun Chen, contributing to a dynamic and innovative work environment.

Conclusion

Hsin-Yu Chen's contributions to memory circuitry through her patents and collaborations highlight her role as a leading inventor in the technology sector. Her work continues to influence advancements in memory device efficiency and functionality.

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