Hsinchu, Taiwan

Hsin-Ying Peng

USPTO Granted Patents = 4 

Average Co-Inventor Count = 9.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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4 patents (USPTO):

Title: Hsin-Ying Peng: Innovator in Semiconductor Technology

Introduction

Hsin-Ying Peng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of conductive structures in semiconductor devices.

Latest Patents

Hsin-Ying Peng's latest patents include innovative techniques for improving conductive structures. One notable patent is for "Conductive structures with bottom-less barriers and liners." This invention involves selectively depositing a blocking material on the bottom surface of a back end of line (BEOL) conductive structure. The barrier layer is designed to prevent the diffusion of metal ions while reducing contact resistance. Another significant patent is titled "Semiconductor devices and methods of formation," which describes various BEOL layer formation techniques aimed at enhancing semiconductor device performance.

Career Highlights

Hsin-Ying Peng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing technologies that improve the efficiency and reliability of semiconductor devices.

Collaborations

Hsin-Ying Peng has collaborated with notable colleagues, including Shu-Cheng Chin and Chih-Chien Chi. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Hsin-Ying Peng's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor device performance and efficiency.

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