Hsin-Tang Peng

Title: Hsin-Tang Peng: Innovator in Semiconductor Technology

Introduction

Hsin-Tang Peng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His innovative work focuses on improving processes that enhance the performance and reliability of semiconductor devices.

Latest Patents

One of Hsin-Tang Peng's latest patents is a dual damascene process that prevents the diffusion of metals and improves trench-to-via alignment. This process involves creating a semiconductor device with two low dielectric constant layers. In this method, a via hole and a trench are formed in the dielectric layers, allowing for effective connection with a conductive region below. A barrier layer is removed to facilitate this connection, and a liner is deposited on the sidewalls of the dielectric layers to prevent conductive particles from contaminating the layers during the process.

Another notable patent involves a method for fabricating a deep trench capacitor using a patterned mask. This method includes forming a deep trench with a specific pattern on a substrate, which is crucial for creating a deep trench capacitor. The innovative approach enhances the efficiency and effectiveness of semiconductor fabrication.

Career Highlights

Hsin-Tang Peng is currently employed at Mosel Vitelic Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced processes that are essential for modern electronic devices.

Collaborations

Throughout his career, Hsin-Tang Peng has collaborated with talented individuals such as Fu-Cheng Lin and Chun-Wei Chen. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in the semiconductor industry.

Conclusion

Hsin-Tang Peng's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence the development of more efficient and reliable semiconductor devices.