Taichung, Taiwan

Hsiao-Wei Chen

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiao-Wei Chen. Retrieved from https://idiyas.com/inventor/hsiao-wei-chen-dy8uavcl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Hsiao-Wei Chen: Innovator in Semiconductor Technology

Introduction

Hsiao-Wei Chen is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the manufacturing process of semiconductor devices.

Latest Patents

Hsiao-Wei Chen holds a patent for a semiconductor structure and a planarization method thereof. This method involves forming a dielectric layer over a polish stop layer. The dielectric layer is polished until it reaches the polish stop layer, resulting in a polished dielectric layer with a concave top surface. A compensation layer is then formed over this concave top surface and subsequently polished. This innovative approach improves the efficiency and effectiveness of semiconductor manufacturing.

Career Highlights

Hsiao-Wei Chen is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Han-Wen Liao and Chun-Jung Huang. Their collective expertise contributes to the advancement of semiconductor technologies.

Conclusion

Hsiao-Wei Chen's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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