The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Feb. 22, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Jung Huang, Yunlin County, TW;
Hsu-Shui Liu, Taoyuan, TW;
Han-Wen Liao, Taichung, TW;
Yu-Yao Huang, Taichung, TW;
Hsiao-Wei Chen, Taichung, TW;
Yung-Lin Hsu, Hsinchu, TW;
Kuang-Huan Hsu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02126 (2013.01); H01L 21/02271 (2013.01); H01L 21/02282 (2013.01); H01L 21/31053 (2013.01); H01L 21/76819 (2013.01); H01L 21/76837 (2013.01); H01L 29/0649 (2013.01); H01L 29/665 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract
A planarization method includes forming a dielectric layer over a polish stop layer. The dielectric layer is polished until reaching the polish stop layer, and the polished dielectric layer has a concave top surface. A compensation layer is formed over the concave top surface. The compensation layer is polished.