Hsiao-Leng Li

Title: Hsiao-Leng Li: Innovator in Semiconductor Technology

Introduction

Hsiao-Leng Li is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patent that enhances the efficiency and functionality of semiconductor devices.

Latest Patents

Hsiao-Leng Li holds a patent for a "Contact process and contact structure for semiconductor device." This patent describes a method involving a substrate with a doped region and a dielectric layer. The process includes forming a contact hole through the dielectric layer to expose the doped region. An insulating liner layer is created within the contact hole, and a portion of this layer is etch-removed. Over-etching is then performed, followed by the formation of a conductive epitaxial layer from the doped region. Finally, the contact hole is filled with a conductive material. This innovative approach improves the performance of semiconductor devices.

Career Highlights

Hsiao-Leng Li is associated with Macronix International Co., Ltd., a leading company in the semiconductor industry. His work at Macronix has allowed him to focus on advancing semiconductor technologies and contributing to the company's success.

Collaborations

Hsiao-Leng Li has collaborated with Zong-Jie Ko, a fellow innovator in the field. Their partnership has fostered advancements in semiconductor processes and structures.

Conclusion

Hsiao-Leng Li's contributions to semiconductor technology through his patent and work at Macronix International Co., Ltd. highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of semiconductor devices.