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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9870943 B1

PDFFull Text
Date of Patent:
Jan. 16, 2018

Filed:

Jan. 16, 2015

Contact process and contact structure for semiconductor device

Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Zong-Jie Ko, Hsinchu, TW;

Hsiao-Leng Li, Hsinchu, TW;

Assignee:

MACRONIX International Co., Ltd., Hsinchu, TW;

Attorney:

J.C. Patents

Primary Examiner:

Jamie C Niesz

Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/768 (2006.01); H01L 29/08 (2006.01); H01L 21/283 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 27/11573 (2017.01); H01L 21/285 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/283 (2013.01); H01L 21/28525 (2013.01); H01L 21/76802 (2013.01); H01L 21/76897 (2013.01); H01L 27/11573 (2013.01); H01L 29/0847 (2013.01); H01L 29/41783 (2013.01); H01L 29/665 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 21/76805 (2013.01); H01L 29/267 (2013.01);
Abstract

A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact hole is formed through the dielectric layer and exposing the doped region. An insulating liner layer is formed a in the contact hole. A portion of the insulating liner layer at a bottom of the contact hole is etch-removed and over-etching is performed. A conductive epitaxial layer is formed from the doped region in the contact hole, and then the contact hole is filled with a conductive material.

Find Patent Forward Citations

Ko, Zong-Jie. (2018). Contact process and contact structure for semiconductor device (U.S. Patent No. 9870943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9870943

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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