Hsiao-Lei Wang

Title: Hsiao-Lei Wang: Innovator in Semiconductor Technology

Introduction

Hsiao-Lei Wang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His innovative work focuses on enhancing device performance and manufacturing processes.

Latest Patents

One of Hsiao-Lei Wang's latest patents is for an encapsulated substrate, which includes a zinc oxide substrate and a composite barrier layer. The composite barrier layer consists of a first film layer made from a material different from zinc oxide, a second film layer covering the first film layer, and an active layer formed on the composite barrier layer. This invention aims to improve the performance of high band-gap devices.

Another notable patent is for a low parasitic capacitance bit line process for stack DRAM. This method involves several steps, including the application of a multi-layer resist coat, the formation of contact holes, and the deposition of an oxide layer. The process is designed to enhance the efficiency of stack DRAM manufacturing.

Career Highlights

Hsiao-Lei Wang has worked with various companies throughout his career, including Promos Technologies, Inc. His experience in the semiconductor industry has allowed him to develop innovative solutions that address complex challenges in device manufacturing.

Collaborations

Hsiao-Lei Wang has collaborated with notable professionals in his field, including Sheng-Fen Chiu and Jesse Chung. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of his patents.

Conclusion

Hsiao-Lei Wang is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His innovative patents and collaborations reflect his commitment to enhancing device performance and manufacturing processes.