Hsiang-Pan Li

Title: Hsiang-Pan Li: Innovator in Memory Device Technology

Introduction

Hsiang-Pan Li is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory device technology, particularly in the area of programmable resistive memory elements. His innovative approach has led to advancements that enhance the performance and reliability of memory devices.

Latest Patents

Hsiang-Pan Li holds a patent for a "Resistance drift recovery method for MLC PCM." This method provides a solution for operating a memory device that includes an array of memory cells with programmable resistive memory elements. The process involves programming memory cells to store data by applying program pulses, which establish resistance levels within specified ranges. A drift recovery process is executed by applying a recovery pulse to a set of programmed memory cells, ensuring that the memory cells maintain their resistance levels effectively.

Career Highlights

Li's career is marked by his work at Macronix International Co., Ltd., where he has been instrumental in developing cutting-edge memory technologies. His expertise in memory cell programming and drift recovery methods has positioned him as a key player in the industry.

Collaborations

Some of Hsiang-Pan Li's coworkers include Win-San Khwa and Tzu-Hsiang Su. Their collaborative efforts contribute to the innovative environment at Macronix International Co., Ltd., fostering advancements in memory technology.

Conclusion

Hsiang-Pan Li's contributions to memory device technology through his patented methods demonstrate his commitment to innovation in the field. His work continues to influence the development of reliable and efficient memory solutions.