The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Sep. 04, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Win-San Khwa, Taipei, TW;

Tzu-Hsiang Su, Hsinchu, TW;

Chao-I Wu, Hsinchu, TW;

Hsiang-Pan Li, Hsinchu, TW;

Meng-Fan Chang, Taichung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01);
Abstract

A method is provided for operating a memory device including an array of memory cells including programmable resistive memory elements. Memory cells in the array are programmed to store data by applying program pulses to the memory cells to establish resistance levels within a number N of specified ranges of resistance, where each of the specified ranges corresponds to a particular data value. A drift recovery process is executed to the memory cells, including applying a recovery pulse having a pulse shape to a set of programmed memory cells, where memory cells in the set have resistance levels within two or more of the specified resistance ranges.


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