Macronix International Co., Ltd.

Hsiang-Pan Li

Chao-I Wu

Meng-Fan Chang

Win-San Khwa

Tzu-Hsiang Su

A method is provided for operating a memory device including an array of memory cells including programmable resistive memory elements. Memory cells in the array are programmed to store data by applying program pulses to the memory cells to establish resistance levels within a number N of specified ranges of resistance, where each of the specified ranges corresponds to a particular data value. A drift recovery process is executed to the memory cells, including applying a recovery pulse having a pulse shape to a set of programmed memory cells, where memory cells in the set have resistance levels within two or more of the specified resistance ranges.

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Hsinchu, Taiwan

Hsiang-Pan Li