This inventor holds 1 USPTO granted patent. Top assignee: National Science Council. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2003
Title: Hsiang-Ming Tseng: Innovator in ZnSe Thin Film Technology
Introduction
Hsiang-Ming Tseng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the preparation of zinc selenide (ZnSe) thin films. His innovative methods have implications for various applications, including multilayer anti-reflection coatings and blue light emitting devices.
Latest Patents
Hsiang-Ming Tseng holds a patent for a "Method for preparing ZnSe thin films by ion-assisted continuous wave CO2 laser deposition." This patent describes a technique where ZnSe thin films are grown on quartz glass and GaAs(100) substrates using continuous wave CO2 laser with ion beam assisted deposition. The advantages of this method include being cheaper and safer compared to traditional techniques such as Ion-Beam coating, MBE, MOCVD, and PLD. The use of a continuous wave laser allows for localized heating of the target, which reduces contamination and heat radiation, making it a more efficient process.
Career Highlights
Hsiang-Ming Tseng is affiliated with the National Science Council, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative approach and practical applications in the industry.
Collaborations
He has collaborated with notable colleagues, including Pey-Shiun Yeh and Cheng-Chung Jaing, contributing to the advancement of research in his field.
Conclusion
Hsiang-Ming Tseng's contributions to the development of ZnSe thin films through innovative methods highlight his role as a key inventor in semiconductor technology. His work not only enhances the efficiency of manufacturing processes but also paves the way for future advancements in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile