The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
May. 05, 2000
Pey-Shiun Yeh, Hsin-Chu, TW;
Jyh-Shin Chen, Hsin-Chu, TW;
Cheng-Chung Jaing, Hsin-Chu, TW;
Hsiang-Ming Tseng, Hsin-Chu, TW;
Long-Sheng Liao, Hsin-Chu, TW;
Ming-Chih Lee, Hsin Chu, TW;
National Science Council, Taipei, TW;
Abstract
Zincselenide (ZnSe) thin films were grown on quartz glass and GaAs(100) substrates by continuous wave (CW) CO laser with ion beam assisted deposition. The ZnSe thin films are applied for multilayer anti-reflection coatings and blue light emitting devices. There are advantages to this technique over the Ion-Beam coating, MBE, MOCVD and PLD methods for fabricating layered semiconductors. It is cheaper and safer than Ion-Beam coating, MBE, MOCVD and others. It is cheaper and safer to heat the target locally by using a continuous wave laser so that contaminations and heat radiation are reduced. It is also cheaper and safer to avoid the splash of PLD.