Hsiang-Ming Feng is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work focuses on innovative methods and structures that enhance semiconductor manufacturing processes.

Latest Patents

One of Hsiang-Ming Feng's latest patents is titled "Semiconductor package and method of manufacturing the same." This patent describes a semiconductor substrate that includes a first dielectric layer with a first surface and a second surface. It features a first conductive via extending between these surfaces, along with a first patterned conductive layer on the first surface and a second patterned conductive layer on the second surface. The design incorporates a bottom pattern with at least two geometric centers corresponding to distinct geometric patterns. The distance between these geometric centers is greater than 1.4 times the geometric radius, which is a critical aspect of the invention. This patent also outlines a method for manufacturing the semiconductor substrate and a semiconductor package structure that utilizes this substrate.

Career Highlights

Hsiang-Ming Feng is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry.

Collaborations

Some of Hsiang-Ming Feng's notable coworkers include Sheng-Ming Wang and Tien-Szu Chen. Their collaborative efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

Hsiang-Ming Feng's work in semiconductor technology exemplifies the impact of innovative thinking in the field. His patents and contributions continue to shape the future of semiconductor manufacturing.

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