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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsiang Jen Tseng

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiang Jen Tseng. Retrieved from https://idiyas.com/inventor/hsiang-jen-tseng-s9wljaiv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:

goldMedal2 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2020

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2 patents (USPTO):Explore Patents
1. 10553575 - Semiconductor device having engineering change order (ECO) cells and method of using (2020-02-04),
2. 9831230 - Standard cell layout, semiconductor device having engineering change order (ECO) cells and method (2017-11-28),

Title: Inventor Hsiang Jen Tseng

Introduction: Hsiang Jen Tseng is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tseng holds several patents in various technological domains, including semiconductor devices, communication systems, and renewable energy solutions.

Career Highlights: With a career spanning over two decades, Tseng has worked with leading tech companies and research institutions, playing a pivotal role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Tseng has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and excellence in all his projects.

Conclusion: Hsiang Jen Tseng's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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