This inventor holds 2 USPTO granted patents and 4 published patent applications. Top assignee: Unimicron Technology Corporation. Active years: 2018-2019.
Company Filing History:
Years Active: 2018-2019
Title: Hsiang-Hung Huang: Innovator in Integrated Circuit Technology
Introduction
Hsiang-Hung Huang is an inventor based in Hsinchu, Taiwan. He is known for his contributions to the field of integrated circuits and transistor technology. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications
Hsiang-Hung Huang has submitted several notable patent applications. One of his latest applications is for a device titled "COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH CONDUCTIVE THROUGH SUBSTRATE LAYER." This device includes a complementary transistor with a first and second transistor stacked on top of each other. The design features overlapping source/drain regions and a gate isolation structure, which enhances the device's performance.
Another significant application is for an "INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF." This integrated circuit comprises multiple transistors and a vertical local interconnection. The configuration allows for efficient connections between front-side and back-side source/drain epitaxies, showcasing Huang's innovative approach to circuit design.
Conclusion
Hsiang-Hung Huang is an emerging inventor in the field of integrated circuits, with promising patent applications that highlight his innovative designs. His work has the potential to influence future advancements in transistor technology and integrated circuit manufacturing.