Company Filing History:
2 out of 7,087 
2 out of 832,891 Years Active: 2001
Title: Hsi-Chin Lin: Innovator in Semiconductor Fabrication
Introduction
Hsi-Chin Lin is a prominent inventor based in Hsinchu Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His innovative methods have advanced the fabrication processes of semiconductor devices, showcasing his expertise and dedication to the industry.
Latest Patents
Hsi-Chin Lin's latest patents include a method of fabricating a semiconductive device. This method involves forming an insulation layer over the gate electrode and the substrate, which is then anisotropically etched away to create a spacer. The design ensures that the tip of the spacer is at the same height as the upper surface of the liner layer, enhancing the exposed area of the gate electrode surface. Another notable patent is the method of fabricating a MOS device using a sacrificial layer and spacer. This process includes forming a gate on a substrate, creating a spacer on the gate's sidewall, and utilizing a sacrificial layer to facilitate the formation of a source/drain region in the substrate.
Career Highlights
Throughout his career, Hsi-Chin Lin has worked with notable companies, including United Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Hsi-Chin Lin has collaborated with esteemed colleagues such as Chun-Lung Chen and Hsi-Mao Hsiao. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Hsi-Chin Lin's contributions to semiconductor fabrication are noteworthy, with his patents reflecting his innovative spirit and technical expertise. His work continues to influence the industry, paving the way for future advancements in technology.