The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Jun. 28, 1999
Chun-Lung Chen, Tainan Hsien, TW;
Hsi-Chin Lin, Hsinchu Hsien, TW;
Hsi-Mao Hsiao, Hsinchu, TW;
Wen-Hua Cheng, Hsinchu Hsien, TW;
Other;
Abstract
A fabrication method for a gate spacer. The method comprises provision of a substrate with a gate formed thereon, after which a SiN,spacer is formed on the gate sidewall. The substrate is then covered with a SiO,layer. A part of the SiO,layer is removed until the surface of the SiO,layer is lower than the top surface of the gate. A portion of the SiN,layer is removed to expose the top edge of the gate spacer and to increase the exposed area of the gate. The SiO,layer is consequently removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile