Houssam Lazkani

Title: Houssam Lazkani: Innovator in Semiconductor Technology

Introduction

Houssam Lazkani is a notable inventor based in Ballston Spa, NY (US), recognized for his contributions to semiconductor technology. With a total of two patents to his name, Lazkani has made significant advancements in methods and apparatuses that enhance semiconductor processes.

Latest Patents

Lazkani's latest patents include "Methods and apparatus for forming backside power rails." This innovative method involves creating a sacrificial fill material that can be selectively removed to form a backside contact via for a transistor backside power rail. The process includes an anisotropic dry etch using chlorine gas to remove the oxide layer from the substrate, forming a partial oxide spacer, and epitaxially growing the sacrificial fill material. Another significant patent is "Across-wafer profile control in semiconductor processes." This patent outlines methods for controlling the profile of a semiconductor process across a wafer's radius, utilizing polynomial fitting and gain matrices to optimize process inputs.

Career Highlights

Throughout his career, Houssam Lazkani has worked with prominent companies in the semiconductor industry, including Applied Materials, Inc. and GlobalFoundries Inc. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Lazkani has collaborated with notable professionals in the field, including He Ren and Raman Gaire. These collaborations have likely enriched his work and contributed to the development of his patents.

Conclusion

Houssam Lazkani stands out as an influential inventor in the semiconductor industry, with his innovative patents paving the way for advancements in technology. His work continues to impact the field significantly.