logo

For the Inventor, By the Inventor

Hefei, China

Hongwen Li

This inventor holds 19 USPTO granted patents and 8 published patent applications and 11 EPO patents, primarily in Semiconductor Memory. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongwen Li. Retrieved from https://idiyas.com/inventor/hongwen-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 23(Granted Patents)


Location History:

  • Shanghai, CN (2023)
  • Hefei, CN (2021 - 2024)

Company Filing History:

goldMedal19 out of 1,856 
 
Changxin Memory Technologies, Inc.
 patents

Years Active: 2021-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor
Memory Bank
Data Storage
Amplification Circuit
Error Checking
Memory Device
DRAM
Chip Assembly
Redistribution Layers
Memory Array
Control Method
Electronics
19 patents (USPTO):Explore Patents
1. 12733459 - Package structure having a semiconductor functional structure and redistribution layers (RDLs) (2026-09-08),
2. 12620422 - Data storage circuit and control method thereof, and storage apparatus (2026-05-05),
3. 12374389 - Memory bank and memory (2025-07-29),
4. 12327600 - Memory with error checking and correcting unit (2025-06-10),
5. 12315555 - Amplification circuit, control method, and memory (2025-05-27),
6. 12266397 - Amplification circuit, control method, and memory (2025-04-01),
7. 12254939 - Memory structure and memory device (2025-03-18),
8. 12176054 - Memory bank and memory (2024-12-24),
9. 12119045 - Memory array layers with alternating sense amplifier layers (2024-10-15),
10. 12100444 - Memory (2024-09-24),
11. 11894089 - Memory with error checking and correcting unit (2024-02-06),
12. 11887657 - Amplifier circuit, control method, and memory (2024-01-30),
13. 11880585 - Semiconductor memory and method for writing data (2024-01-23),
14. 11869578 - Memory bank and memory (2024-01-09),
15. 11698830 - Semiconductor memory (2023-07-11),

Title: Innovations of Hongwen Li in Memory Technology

Introduction

Hongwen Li is a prominent inventor based in Hefei, China, known for his significant contributions to memory technology. With a total of 17 patents to his name, he has made remarkable advancements in the field of memory banks and error-checking systems. His work has been instrumental in enhancing the efficiency and reliability of memory storage solutions.

Latest Patents

Among his latest patents, Hongwen Li has developed a memory bank that includes multiple memory arrays arranged in a unique configuration. This memory bank features several read-write control circuits positioned between adjacent memory arrays, allowing for improved data management. Additionally, he has created a memory system equipped with error checking and correcting units, which ensures data integrity by identifying and rectifying errors within the storage array.

Career Highlights

Hongwen Li is currently employed at Changxin Memory Technologies, Inc., where he continues to innovate and push the boundaries of memory technology. His expertise and dedication have positioned him as a key figure in the industry, contributing to the development of advanced memory solutions that meet the growing demands of modern computing.

Collaborations

Hongwen Li collaborates with talented individuals such as WeiBing Shang and KangLing Ji, who share his passion for innovation in memory technology. Together, they work on projects that aim to revolutionize the way data is stored and accessed.

Conclusion

In summary, Hongwen Li's contributions to memory technology through his patents and collaborations have significantly impacted the field. His innovative approaches continue to pave the way for advancements in memory systems, ensuring greater efficiency and reliability in data storage.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…