Hongwen Li

This inventor holds 19 USPTO granted patents and 8 published patent applications and 11 EPO patents. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2021-2026.

USPTO Granted Patents = 19 (Patent Applications = 8)

% Patents Active = 100.0

EPO Patents = 11 (Patent Applications = 12)

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 23(Granted Patents)

Location History:

Shanghai, CN (2023)
Hefei, CN (2021 - 2024)

Company Filing History:

19 out of 1,845

Changxin Memory Technologies, Inc.

patents

Years Active: 2021-2026

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733459 - Package structure having a semiconductor functional structure and redistribution layers (RDLs) (2026-09-08),

2. 12620422 - Data storage circuit and control method thereof, and storage apparatus (2026-05-05),

3. 12374389 - Memory bank and memory (2025-07-29),

4. 12327600 - Memory with error checking and correcting unit (2025-06-10),

5. 12315555 - Amplification circuit, control method, and memory (2025-05-27),

6. 12266397 - Amplification circuit, control method, and memory (2025-04-01),

7. 12254939 - Memory structure and memory device (2025-03-18),

8. 12176054 - Memory bank and memory (2024-12-24),

9. 12119045 - Memory array layers with alternating sense amplifier layers (2024-10-15),

10. 12100444 - Memory (2024-09-24),

11. 11894089 - Memory with error checking and correcting unit (2024-02-06),

12. 11887657 - Amplifier circuit, control method, and memory (2024-01-30),

13. 11880585 - Semiconductor memory and method for writing data (2024-01-23),

14. 11869578 - Memory bank and memory (2024-01-09),

15. 11698830 - Semiconductor memory (2023-07-11),

Title: Innovations of Hongwen Li in Memory Technology

Introduction

Hongwen Li is a prominent inventor based in Hefei, China, known for his significant contributions to memory technology. With a total of 17 patents to his name, he has made remarkable advancements in the field of memory banks and error-checking systems. His work has been instrumental in enhancing the efficiency and reliability of memory storage solutions.

Latest Patents

Among his latest patents, Hongwen Li has developed a memory bank that includes multiple memory arrays arranged in a unique configuration. This memory bank features several read-write control circuits positioned between adjacent memory arrays, allowing for improved data management. Additionally, he has created a memory system equipped with error checking and correcting units, which ensures data integrity by identifying and rectifying errors within the storage array.

Career Highlights

Hongwen Li is currently employed at Changxin Memory Technologies, Inc., where he continues to innovate and push the boundaries of memory technology. His expertise and dedication have positioned him as a key figure in the industry, contributing to the development of advanced memory solutions that meet the growing demands of modern computing.

Collaborations

Hongwen Li collaborates with talented individuals such as WeiBing Shang and KangLing Ji, who share his passion for innovation in memory technology. Together, they work on projects that aim to revolutionize the way data is stored and accessed.

Conclusion

In summary, Hongwen Li's contributions to memory technology through his patents and collaborations have significantly impacted the field. His innovative approaches continue to pave the way for advancements in memory systems, ensuring greater efficiency and reliability in data storage.