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For the Inventor, By the Inventor

San Jose, CA, United States of America

Hongquan Jiang

USPTO Granted Patents = 24 

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 85(Granted Patents)


Company Filing History:

goldMedal21 out of 5,310 
 
Western Digital Technologies, Inc.
 patents
silverMedal3 out of 987 
 
Hgst Netherlands, B.v.
 patents

Years Active: 2015-2025

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24 patents (USPTO):
1. 12314842 - Matrix-vector multiplication using SOT-based non-volatile memory cells (2025-05-27),
2. 12131759 - Two-dimensional magnetic recording read head with TaOx layer for flat middle shield topography and method of forming thereof (2024-10-29),
3. 11776565 - Tape head with side-shielded writers and process for making same (2023-10-03),
4. 11735211 - Read head having one or more antiferromagnetic layers above soft bias side shields, and related methods (2023-08-22),
5. 11670329 - Two-dimensional magnetic recording (TDMR) to counter tape dimensional stability (TDS) errors in a tape media (2023-06-06),
6. 11514936 - Read head having one or more antiferromagnetic layers below soft bias side shields, and related methods (2022-11-29),
7. 11514932 - Soft bias shape anisotropy stabilization read head design and method of making same (2022-11-29),
8. 11514930 - Soft bias side shield stabilized by hard bias for read head design (2022-11-29),
9. 11489108 - BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation (2022-11-01),
10. 11437061 - Read head having one or more antiferromagnetic layers above soft bias side shields, and related methods (2022-09-06),
11. 11393516 - SOT-based spin torque oscillators for oscillatory neural networks (2022-07-19),
12. 11283008 - Apparatus and methods for magnetic memory devices with magnetic assist layer (2022-03-22),
13. 11170803 - Magnetic recording write head with spin-torque oscillator (STO) and extended seed layer (2021-11-09),
14. 10839845 - Magnetic sensors with effectively shaped side shields (2020-11-17),
15. 10839828 - Magnetic write head with current guiding layer (2020-11-17),

Title: Innovations and Contributions of Hongquan Jiang in Non-Volatile Memory Technologies

Introduction

Hongquan Jiang is a prominent inventor based in San Jose, California, recognized for his groundbreaking contributions to the field of non-volatile memory technology. With an impressive portfolio of 24 patents, he has significantly influenced advancements in data storage solutions. His innovative work is characterized by a deep understanding of memory architecture and its applications.

Latest Patents

Among his latest patents is a remarkable invention titled "Matrix-vector multiplication using SOT-based non-volatile memory cells". This apparatus features an array with n rows and m columns of nodes, integrated with spin orbit torque MRAM non-volatile memory cells designed to efficiently handle matrix-vector operations. The configuration enables the generation of output currents corresponding to the multiplication of an input vector by an n×m array of weights, marking a substantial advancement in memory technology.

Another notable patent is related to a "Two-dimensional magnetic recording read head with TaOx layer for flat middle shield topography and method of forming thereof". This invention outlines a dual free layer (DFL) read head design that includes innovative techniques for forming a dielectric layer, allowing for enhanced flatness and performance in magnetic recording devices.

Career Highlights

Hongquan Jiang has had a successful career working with leading technology firms. He has been associated with Western Digital Technologies, Inc. and HGST Netherlands B.V., where he played a crucial role in developing advanced data storage technologies. His work has yielded numerous patents that reflect his expertise and vision in the field.

Collaborations

Throughout his career, Hongquan has collaborated with various talented professionals, including Quang Le and Xiaoyong Liu. These partnerships have contributed to the innovation process, fostering a dynamic environment for developing cutting-edge technologies.

Conclusion

In summary, Hongquan Jiang's contributions to the realm of non-volatile memory technologies are characterized by a series of innovative patents that enhance the efficiency and capacity of data storage systems. His work exemplifies the vital role of inventors in advancing technological frontiers.

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