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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11489108 B1

PDFFull Text
Date of Patent:
Nov. 01, 2022

Filed:

Apr. 28, 2020

Bisb topological insulator with seed layer or interlayer to prevent sb diffusion and promote bisb (012) orientation

Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Quang Le, San Jose, CA (US);

Cherngye Hwang, San Jose, CA (US);

Brian R. York, San Jose, CA (US);

Andrew Chen, San Jose, CA (US);

Thao A. Nguyen, San Jose, CA (US);

Yongchul Ahn, San Jose, CA (US);

Xiaoyong Liu, San Jose, CA (US);

Hongquan Jiang, San Jose, CA (US);

Zheng Gao, San Jose, CA (US);

Kuok San Ho, Emerald Hills, CA (US);

Assignee:

Western Digital Technologies, Inc., San Jose, CA (US);

Attorneys:

Patterson & Sheridan, LLP

Steven H. VerSteeg

Primary Examiner:

Samuel A Gebremariam

Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/04 (2006.01); H01L 27/22 (2006.01); H01L 43/06 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); G11B 5/39 (2006.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); G11B 5/3909 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01L 27/222 (2013.01); H01L 43/06 (2013.01); H01L 43/10 (2013.01); G11B 2005/0018 (2013.01); G11B 2005/0032 (2013.01);
Abstract

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

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