Hefei, China

Hongfa Wu

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongfa Wu. Retrieved from https://idiyas.com/inventor/hongfa-wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Hongfa Wu in Semiconductor Technology

Introduction

Hongfa Wu is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on memory devices and semiconductor structures, showcasing his expertise in this critical area of innovation.

Latest Patents

Hongfa Wu's latest patents include a memory device and a semiconductor structure along with a forming method. The memory device patent outlines a process that involves providing a substrate with multiple bit line structures. It details the formation of a cover layer on each bit line structure, followed by the sequential application of a first and second insulating layer. The method also includes filling the space between the second insulating layers of adjacent bit line structures with a conductive contact layer. The design ensures that the tops of the conductive contact layers and the second insulating layers are lower than the surfaces of the cover layers, while also being higher than the surfaces of the bit line structures.

Additionally, his patent on the DRAM semiconductor structure formation method describes a comprehensive approach to creating a semiconductor structure. This includes forming a first bitline structure and a first dielectric layer on a substrate, which defines discrete capacitor contact openings. The method further elaborates on the removal of parts of the height of various layers to create openings for capacitor contact structures.

Career Highlights

Hongfa Wu is currently employed at Changxin Memory Technologies, Inc., where he continues to advance his research and development in semiconductor technologies. His innovative work has positioned him as a key figure in the industry, contributing to the evolution of memory devices.

Collaborations

He has collaborated with notable coworkers, including Longyang Chen and Gongyi Wu, who share his commitment to advancing semiconductor technology.

Conclusion

Hongfa Wu's contributions to semiconductor technology through his patents and work at Changxin Memory Technologies, Inc. highlight his role as an influential inventor in the field. His innovative approaches to memory devices and semiconductor structures continue to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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