Changxin Memory Technologies, Inc.

Hongfa Wu

Longyang Chen

Gongyi Wu

Zhongming Liu

The present disclosure provides a memory device, and a semiconductor structure and a forming method thereof, which includes: providing a substrate, which includes a plurality of bit line structures, forming a cover layer on each of the bit line structures, forming a first insulating layer and a second insulating layer sequentially on a side wall of each cover layer, and filling a space between second insulating layers of two adjacent bit line structures with a conductive contact layer; tops of the conductive contact layers and the second insulating layers are all lower than surfaces of the cover layers and higher than surfaces of the bit line structures; tops of the first insulating layers are flush with those of the conductive contact layers and the second insulating layers; and etching back the conductive contact layers, to form a capacitor contact hole between cover layers of two adjacent bit line structures.

Memory device, and semiconductor structure and forming method thereof

Embodiments of the present application provide a semiconductor structure formation method and a semiconductor structure. The method includes: the substrate including contact region and dummy region, a first bitline structure and a first dielectric layer being formed on the substrate, the first bitline structure and the first dielectric layer defining discrete capacitor contact openings; forming a first sacrificial layer filling the capacitor contact opening; removing, in the dummy region, part of height of the first bitline structure, part of height of the first dielectric layer and part of height of the first sacrificial layer to form a first opening located at top of a second bitline structure, a second dielectric layer and a second sacrificial layer; forming an insulation layer filling the first opening; removing, in the contact region, the first sacrificial layer to form a second opening; and forming a capacitor contact structure located in the second opening.

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Hefei, China

Hongfa Wu