Company Filing History:

9 out of 14,705

Infineon Technologies Ag

where one patent can have more than one assignee

Years Active: 2007-2017

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9 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9659962 - Semiconductor devices and methods of manufacture thereof (2017-05-23),

2. 8722473 - Semiconductor devices and methods of manufacture thereof (2014-05-13),

3. 8269289 - Transistor device and methods of manufacture thereof (2012-09-18),

4. 8188551 - Semiconductor devices and methods of manufacture thereof (2012-05-29),

5. 8017484 - Transistor device and methods of manufacture thereof (2011-09-13),

6. 7696517 - NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric (2010-04-13),

7. 7361538 - Transistors and methods of manufacture thereof (2008-04-22),

8. 7253050 - Transistor device and method of manufacture thereof (2007-08-07),

9. 7160781 - Transistor device and methods of manufacture thereof (2007-01-09),

Title: Inventor Spotlight: Hongfa Luan

Introduction

Hongfa Luan, an influential inventor based in Austin, TX, has made significant contributions to the field of semiconductor technology. With a total of 9 patents to his name, Luan's work primarily focuses on innovative semiconductor devices and their manufacturing methods. His expertise in this domain has garnered attention and respect from fellow inventors and industry professionals alike.

Latest Patents

Among his recent patents is a groundbreaking innovation involving complimentary metal oxide semiconductor (CMOS) devices. This invention outlines a CMOS device that incorporates a PMOS transistor equipped with at least two first gate electrodes with a unique parameter, alongside an NMOS transistor with at least two second gate electrodes featuring a different parameter. These parameters may pertain to the thickness or the dopant profile of the gate electrode materials, which are fundamental in establishing the work function of the PMOS and NMOS transistors. This advancement showcases Luan's dedication to enhancing semiconductor performance and reliability.

Career Highlights

Throughout his career, Hongfa Luan has worked with prominent companies including Infineon Technologies AG and Intel Corporation. His professional journey has allowed him to engage in cutting-edge research and development initiatives, significantly advancing the semiconductor industry. Luan's innovative mindset and technical prowess have positioned him as a key figure in this competitive field.

Collaborations

Luan's collaborative efforts with industry professionals have also played a vital role in his success. He has had the pleasure of working alongside notable coworkers, including Thomas Schulz and Prashant Majhi. Their combined expertise and innovative spirits have resulted in meaningful advancements in semiconductor technologies.

Conclusion

As an inventor, Hongfa Luan continues to push the boundaries of technology with his revolutionary patent contributions. His profound impact on semiconductor devices not only highlights his innovative spirit but also serves as an inspiration for future inventors in the field. With ongoing advancements in technology, Luan's work will undoubtedly influence the next generation of semiconductor innovations.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.