The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Apr. 14, 2005
Hongfa Luan, Austin, TX (US);
Prashant Majhi, Austin, TX (US);
Hongfa Luan, Austin, TX (US);
Prashant Majhi, Austin, TX (US);
Infineon Technologies AG, Munich, DE;
Intel Corporation, Santa Clara, CA (US);
Abstract
Transistors and methods of manufacture thereof are disclosed. A workpiece is provided, a gate dielectric is formed over the workpiece, and a gate is formed over the gate dielectric by exposing the workpiece to a precursor of hafnium (Hf) and a precursor of silicon (Si). The gate includes and include respectively a layer of a combination of Hf and Si. The layer of the combination of Hf and Si of the gate establishes the threshold voltage Vof the transistor. The transistor may includes and include respectively a single NMOS transistor or an NMOS transistor of a CMOS device.